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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
SFS1608G Taiwan Semiconductor Corporation

SFS1608G

DIODE GEN PURP 600V 16A TO263AB

Taiwan Semiconductor Corporation

1,595 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 16A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 60pF @ 4V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
SFS1608GH Taiwan Semiconductor Corporation

SFS1608GH

DIODE GEN PURP 600V 16A TO263AB

Taiwan Semiconductor Corporation

1,580 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 16A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
SFAF1606GH Taiwan Semiconductor Corporation

SFAF1606GH

DIODE GEN PURP 400V 16A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 400 V 16A 1.3 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 100pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
SFAF2008G Taiwan Semiconductor Corporation

SFAF2008G

DIODE GEN PURP 600V 20A ITO220AC

Taiwan Semiconductor Corporation

895 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 20A 1.7 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 150pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
SF2006PT Taiwan Semiconductor Corporation

SF2006PT

DIODE GEN PURP 400V 20A TO247AD

Taiwan Semiconductor Corporation

900 -
Datasheet - TO-247-3 Tube Active Standard 400 V 20A 1.5 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 175pF @ 4V, 1MHz - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF2006PTH Taiwan Semiconductor Corporation

SF2006PTH

DIODE GEN PURP 400V 20A TO247AD

Taiwan Semiconductor Corporation

900 -
Datasheet - TO-247-3 Tube Active Standard 400 V 20A 1.5 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 175pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
UG12JH Taiwan Semiconductor Corporation

UG12JH

20NS, 12A, 600V, ULTRA FAST RECO

Taiwan Semiconductor Corporation

996 -
Datasheet - TO-220-2 Tube Active Standard 600 V 12A 2 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 5 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
SFAF2004GH Taiwan Semiconductor Corporation

SFAF2004GH

35NS, 20A, 200V, SUPER FAST RECO

Taiwan Semiconductor Corporation

670 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 200 V 20A 975 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 170pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
SFAF2006G Taiwan Semiconductor Corporation

SFAF2006G

DIODE GEN PURP 400V 20A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 400 V 20A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 150pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
SFAF2006GH Taiwan Semiconductor Corporation

SFAF2006GH

35NS, 20A, 400V, SUPER FAST RECO

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 400 V 20A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 150pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
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