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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
SF1606PT Taiwan Semiconductor Corporation

SF1606PT

DIODE GEN PURP 400V 16A TO247AD

Taiwan Semiconductor Corporation

900 -
Datasheet - TO-247-3 Tube Active Standard 400 V 16A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 85pF @ 4V, 1MHz - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
UGF12JDH Taiwan Semiconductor Corporation

UGF12JDH

DIODE GEN PURP 600V 12A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 12A 3.1 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 600 V - Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 175°C
SFAF1604GH Taiwan Semiconductor Corporation

SFAF1604GH

35NS, 16A, 200V, SUPER FAST RECO

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 200 V 16A 975 mV @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 130pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
SF2004PTH Taiwan Semiconductor Corporation

SF2004PTH

DIODE GEN PURP 200V 20A TO247AD

Taiwan Semiconductor Corporation

900 -
Datasheet - TO-247-3 Tube Active Standard 200 V 20A 1.1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 175pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF2004PT Taiwan Semiconductor Corporation

SF2004PT

DIODE GEN PURP 200V 20A TO247AD

Taiwan Semiconductor Corporation

897 -
Datasheet - TO-247-3 Tube Active Standard 200 V 20A 1.1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 175pF @ 4V, 1MHz - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF2005PT Taiwan Semiconductor Corporation

SF2005PT

DIODE GEN PURP 300V 20A TO247AD

Taiwan Semiconductor Corporation

892 -
Datasheet - TO-247-3 Tube Active Standard 300 V 20A 1.5 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 300 V 175pF @ 4V, 1MHz - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF2005PTH Taiwan Semiconductor Corporation

SF2005PTH

DIODE GEN PURP 300V 20A TO247AD

Taiwan Semiconductor Corporation

890 -
Datasheet - TO-247-3 Tube Active Standard 300 V 20A 1.5 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 300 V 175pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF2008PTH Taiwan Semiconductor Corporation

SF2008PTH

DIODE GEN PURP 600V 20A TO247AD

Taiwan Semiconductor Corporation

900 -
Datasheet - TO-247-3 Tube Active Standard 600 V 20A 1.9 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 175pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF2008PT Taiwan Semiconductor Corporation

SF2008PT

DIODE GEN PURP 600V 20A TO247AD

Taiwan Semiconductor Corporation

899 -
Datasheet - TO-247-3 Tube Active Standard 600 V 20A 1.9 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 175pF @ 4V, 1MHz - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF3006PT Taiwan Semiconductor Corporation

SF3006PT

DIODE GEN PURP 400V 30A TO247AD

Taiwan Semiconductor Corporation

806 -
Datasheet - TO-247-3 Tube Active Standard 400 V 30A 1.3 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 175pF @ 4V, 1MHz - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
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