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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
ES1BL RTG Taiwan Semiconductor Corporation

ES1BL RTG

DIODE GEN PURP 100V 1A SUB SMA

Taiwan Semiconductor Corporation

7,185 -
Datasheet - DO-219AB Tape & Reel (TR) Active Standard 100 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 100 V 10pF @ 1V, 1MHz - - Surface Mount Sub SMA -55°C ~ 150°C
ES1DL MQG Taiwan Semiconductor Corporation

ES1DL MQG

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

8,328 -
Datasheet - DO-219AB Tape & Reel (TR) Active Standard 200 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 200 V 10pF @ 1V, 1MHz - - Surface Mount Sub SMA -55°C ~ 150°C
ES1DL RQG Taiwan Semiconductor Corporation

ES1DL RQG

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

2,085 -
Datasheet - DO-219AB Tape & Reel (TR) Active Standard 200 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 200 V 10pF @ 1V, 1MHz - - Surface Mount Sub SMA -55°C ~ 150°C
ES1DL RTG Taiwan Semiconductor Corporation

ES1DL RTG

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

7,440 -
Datasheet - DO-219AB Tape & Reel (TR) Active Standard 200 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 200 V 10pF @ 1V, 1MHz - - Surface Mount Sub SMA -55°C ~ 150°C
ES1DLHRTG Taiwan Semiconductor Corporation

ES1DLHRTG

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

4,946 -
Datasheet - DO-219AB Tape & Reel (TR) Active Standard 200 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 200 V 10pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount Sub SMA -55°C ~ 150°C
ES1GL RTG Taiwan Semiconductor Corporation

ES1GL RTG

DIODE GEN PURP 400V 1A SUB SMA

Taiwan Semiconductor Corporation

8,412 -
Datasheet - DO-219AB Tape & Reel (TR) Active Standard 400 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 400 V 8pF @ 1V, 1MHz - - Surface Mount Sub SMA -55°C ~ 150°C
ES1GLHMQG Taiwan Semiconductor Corporation

ES1GLHMQG

DIODE GEN PURP 400V 1A SUB SMA

Taiwan Semiconductor Corporation

9,222 -
Datasheet - DO-219AB Tape & Reel (TR) Active Standard 400 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 400 V 8pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount Sub SMA -55°C ~ 150°C
ES1JL RQG Taiwan Semiconductor Corporation

ES1JL RQG

DIODE GEN PURP 600V 1A SUB SMA

Taiwan Semiconductor Corporation

2,873 -
Datasheet - DO-219AB Tape & Reel (TR) Active Standard 600 V 1A 1.7 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 600 V 8pF @ 1V, 1MHz - - Surface Mount Sub SMA -55°C ~ 150°C
ES1JLHRQG Taiwan Semiconductor Corporation

ES1JLHRQG

DIODE GEN PURP 600V 1A SUB SMA

Taiwan Semiconductor Corporation

8,698 -
Datasheet - DO-219AB Tape & Reel (TR) Active Standard 600 V 1A 1.7 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 600 V 8pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount Sub SMA -55°C ~ 150°C
ES1JLHRTG Taiwan Semiconductor Corporation

ES1JLHRTG

DIODE GEN PURP 600V 1A SUB SMA

Taiwan Semiconductor Corporation

8,875 -
Datasheet - DO-219AB Tape & Reel (TR) Active Standard 600 V 1A 1.7 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 600 V 8pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount Sub SMA -55°C ~ 150°C
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