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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
HS1AL MTG Taiwan Semiconductor Corporation

HS1AL MTG

DIODE GEN PURP 50V 1A SUB SMA

Taiwan Semiconductor Corporation

8,278 -
Datasheet - DO-219AB Tape & Reel (TR) Active Standard 50 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 50 V 20pF @ 4V, 1MHz - - Surface Mount Sub SMA -55°C ~ 150°C
HS1DL MQG Taiwan Semiconductor Corporation

HS1DL MQG

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

4,768 -
Datasheet - DO-219AB Tape & Reel (TR) Active Standard 200 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 200 V 20pF @ 4V, 1MHz - - Surface Mount Sub SMA -55°C ~ 150°C
HS1DL RQG Taiwan Semiconductor Corporation

HS1DL RQG

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

5,005 -
Datasheet - DO-219AB Tape & Reel (TR) Active Standard 200 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 200 V 20pF @ 4V, 1MHz - - Surface Mount Sub SMA -55°C ~ 150°C
HS1DL RTG Taiwan Semiconductor Corporation

HS1DL RTG

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

8,722 -
Datasheet - DO-219AB Tape & Reel (TR) Active Standard 200 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 200 V 20pF @ 4V, 1MHz - - Surface Mount Sub SMA -55°C ~ 150°C
HS1FL MQG Taiwan Semiconductor Corporation

HS1FL MQG

DIODE GEN PURP 300V 1A SUB SMA

Taiwan Semiconductor Corporation

2,594 -
Datasheet - DO-219AB Tape & Reel (TR) Active Standard 300 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 300 V 20pF @ 4V, 1MHz - - Surface Mount Sub SMA -55°C ~ 150°C
HS1FL RQG Taiwan Semiconductor Corporation

HS1FL RQG

DIODE GEN PURP 300V 1A SUB SMA

Taiwan Semiconductor Corporation

8,804 -
Datasheet - DO-219AB Tape & Reel (TR) Active Standard 300 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 300 V 20pF @ 4V, 1MHz - - Surface Mount Sub SMA -55°C ~ 150°C
RS1ALHMQG Taiwan Semiconductor Corporation

RS1ALHMQG

DIODE GEN PURP 50V 800MA SUB SMA

Taiwan Semiconductor Corporation

2,239 -
Datasheet - DO-219AB Tape & Reel (TR) Active Standard 50 V 800mA 1.3 V @ 800 mA Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 50 V 10pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount Sub SMA -55°C ~ 150°C
RS1ALHMTG Taiwan Semiconductor Corporation

RS1ALHMTG

DIODE GEN PURP 50V 800MA SUB SMA

Taiwan Semiconductor Corporation

6,785 -
Datasheet - DO-219AB Tape & Reel (TR) Active Standard 50 V 800mA 1.3 V @ 800 mA Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 50 V 10pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount Sub SMA -55°C ~ 150°C
RS1BL RTG Taiwan Semiconductor Corporation

RS1BL RTG

DIODE GP 100V 800MA SUB SMA

Taiwan Semiconductor Corporation

9,209 -
Datasheet - DO-219AB Tape & Reel (TR) Active Standard 100 V 800mA 1.3 V @ 800 mA Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 100 V 10pF @ 4V, 1MHz - - Surface Mount Sub SMA -55°C ~ 150°C
RS1GL RTG Taiwan Semiconductor Corporation

RS1GL RTG

DIODE GP 400V 800MA SUB SMA

Taiwan Semiconductor Corporation

7,690 -
Datasheet - DO-219AB Tape & Reel (TR) Active Standard 400 V 800mA 1.3 V @ 800 mA Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 400 V 10pF @ 4V, 1MHz - - Surface Mount Sub SMA -55°C ~ 150°C
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