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ELECTRONIC COMPONENTS
Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WNSC6D08650QDIODE SIL CARB 650V 8A TO220AC |
9,986 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.4 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 402pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C |
|
|
WNSC2D1012006QDIODE SIL CARB 1.2KV 10A TO220AC |
7,186 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 481pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
BYC40W-1200PQBYC40W-1200P/TO247-2L/STANDARD M |
3,619 | - |
|
Datasheet | - | TO-247-2 | Bulk | Active | Standard | 1200 V | 40A | 3.3 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 91 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247-2 | 175°C |
|
|
WNSC2D101200W6QDIODE SIL CARB 1.2KV 10A TO247-2 |
9,408 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.65 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 1200 V | 490pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | 175°C |
|
|
BYV60W-600PSQBYV60W-600PS/SOD142/STANDARD MAR |
9,884 | - |
|
Datasheet | - | TO-247-2 | Bulk | Active | Standard | 600 V | 60A | 2 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | 175°C |
|
|
WNC3060D45160WQWNC3060D45160W/TO247/STANDARD MA |
6,386 | - |
|
Datasheet | - | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
WNSC2D151200W6QWNSC2D151200W/TO247-2L/STANDARD |
2,929 | - |
|
Datasheet | - | TO-247-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 1200 V | 700pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | 175°C |
|
|
WB100FC120ALZWB100FC120AL/NAU000/NO MARK*CHIP |
4,923 | - |
|
Datasheet | - | Die | Bulk | Active | Standard | 1200 V | 100A | 3.3 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 250 µA @ 1200 V | - | - | - | Surface Mount | Wafer | 175°C |
|
|
BYC60W-1200PQBYC60W-1200P/TO247-2L/STANDARD M |
4,320 | - |
|
Datasheet | - | TO-247-2 | Bulk | Active | Standard | 1200 V | 60A | 3.3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 96 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247-2 | 175°C |
|
NXPSC04650D6JDIODE SIL CARBIDE 650V 4A DPAK |
6,462 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 170 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C (Max) |
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