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ELECTRONIC COMPONENTS
Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXPSC04650QDIODE SIL CARB 650V 4A TO220AC |
5,389 | - |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 170 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
|
NXPSC06650QDIODE SIL CARB 650V 6A TO220AC |
7,517 | - |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
|
NXPSC08650QDIODE SIL CARB 650V 8A TO220AC |
3,421 | - |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
NXPSC04650DJDIODE SIL CARBIDE 650V 4A DPAK |
4,190 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 170 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C (Max) |
|
NXPSC08650BJDIODE SIL CARBIDE 650V 8A D2PAK |
3,736 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
|
NXPSC08650DJDIODE SIL CARBIDE 650V 8A DPAK |
4,110 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C (Max) |
|
|
NXPLQSC106506QDIODE SCHOTTKY 650V 10A TO220AC |
4,503 | - |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.85 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 250pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
|
WNSC201200CWQDIODE SIL CARB 1.2KV 20A TO247-3 |
4,087 | - |
|
Datasheet | - | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 1200 V | 510pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | 175°C (Max) |
|
WNSC401200CWQDIODE SIL CARB 1.2KV 40A TO247-3 |
5,908 | - |
|
Datasheet | - | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 40A | 1.75 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 810pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | 175°C (Max) |
|
|
WNSC101200QDIODE SIL CARB 1.2KV 10A TO220AC |
7,277 | - |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 1200 V | 510pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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