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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
SFA1004GH Taiwan Semiconductor Corporation

SFA1004GH

35NS, 10A, 200V, SUPER FAST RECO

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Tube Active Standard 200 V 10A 975 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 70pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
VB10150S-E3/8W Vishay General Semiconductor - Diodes Division

VB10150S-E3/8W

DIODE SCHOTTKY 150V 10A TO263AB

Vishay General Semiconductor - Diodes Division

10,579 -
Datasheet TMBS® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 150 V 10A 1.2 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 150 V - - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
GPAS1007 Taiwan Semiconductor Corporation

GPAS1007

10A, 1000V, STANDARD RECOVERY RE

Taiwan Semiconductor Corporation

3,160 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1000 V 10A 1.1 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 50pF @ 4V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
GPAS1005 Taiwan Semiconductor Corporation

GPAS1005

DIODE GEN PURP 600V 10A TO263AB

Taiwan Semiconductor Corporation

1,600 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 10A 1.1 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 50pF @ 4V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
GPAS1004 Taiwan Semiconductor Corporation

GPAS1004

10A, 400V, STANDARD RECOVERY REC

Taiwan Semiconductor Corporation

1,590 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 400 V 10A 1.1 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V 50pF @ 4V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
GPAS1006 Taiwan Semiconductor Corporation

GPAS1006

10A, 800V, STANDARD RECOVERY REC

Taiwan Semiconductor Corporation

1,456 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 800 V 10A 1.1 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 50pF @ 4V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
SFA1006GH Taiwan Semiconductor Corporation

SFA1006GH

35NS, 10A, 400V, SUPER FAST RECO

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Tube Active Standard 400 V 10A 1.3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 50pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
TUAU10JH Taiwan Semiconductor Corporation

TUAU10JH

50NS, 10A, 600V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

4,990 -
Datasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 600 V 10A 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 600 V 135pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount SMPC4.6U -55°C ~ 175°C
V15P22-M3/H Vishay General Semiconductor - Diodes Division

V15P22-M3/H

DIODE SCHOTTKY 200V 3.3A TO277A

Vishay General Semiconductor - Diodes Division

2,990 -
Datasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 200 V 3.3A 910 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 350 µA @ 200 V 835pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -40°C ~ 175°C
RB078BM30SFNSTL Rohm Semiconductor

RB078BM30SFNSTL

30V 5A, TO-252, ULTRA LOW IR SBD

Rohm Semiconductor

2,500 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 30 V 5A 720 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 5 µA @ 30 V - - - Surface Mount TO-252 175°C
SBR12U100P5Q-13D Diodes Incorporated

SBR12U100P5Q-13D

DIODE SBR 100V 12A POWERDI5 T&R

Diodes Incorporated

1,745 -
Datasheet SBR® PowerDI™ 5 Tape & Reel (TR) Active Super Barrier 100 V 12A 780 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 24 ns 250 µA @ 100 V - Automotive AEC-Q101 Surface Mount PowerDI™ 5 -55°C ~ 150°C
SFAS804G Taiwan Semiconductor Corporation

SFAS804G

DIODE GEN PURP 200V 8A TO263AB

Taiwan Semiconductor Corporation

1,600 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 200 V 8A 950 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 80pF @ 4V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
SFAS804GH Taiwan Semiconductor Corporation

SFAS804GH

DIODE GEN PURP 200V 8A TO263AB

Taiwan Semiconductor Corporation

1,550 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 200 V 8A 950 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 80pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
SFAF804GH Taiwan Semiconductor Corporation

SFAF804GH

35NS, 8A, 200V, SUPER FAST RECOV

Taiwan Semiconductor Corporation

995 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 200 V 8A 950 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 90pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
V35PWL63HM3/I Vishay General Semiconductor - Diodes Division

V35PWL63HM3/I

DIODE SCHOTTKY 60V 35A SLIMDPAK

Vishay General Semiconductor - Diodes Division

9,000 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 60 V 35A 680 mV @ 35 A Fast Recovery =< 500ns, > 200mA (Io) - 700 µA @ 60 V 4700pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount SlimDPAK -40°C ~ 150°C
VS-20TQ035-M3 Vishay General Semiconductor - Diodes Division

VS-20TQ035-M3

DIODE SCHOTTKY 35V 20A TO220AC

Vishay General Semiconductor - Diodes Division

7,799 -
Datasheet - TO-220-2 Tube Active Schottky 35 V 20A 730 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 2.7 mA @ 35 V 1400pF @ 5V, 1MHz - - Through Hole TO-220AC -55°C ~ 150°C
SFAS805G Taiwan Semiconductor Corporation

SFAS805G

DIODE GEN PURP 300V 8A TO263AB

Taiwan Semiconductor Corporation

1,600 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 300 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 300 V 60pF @ 4V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
SFAS805GH Taiwan Semiconductor Corporation

SFAS805GH

DIODE GEN PURP 300V 8A TO263AB

Taiwan Semiconductor Corporation

1,600 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 300 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 300 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
SFAS806GH Taiwan Semiconductor Corporation

SFAS806GH

DIODE GEN PURP 400V 8A TO263AB

Taiwan Semiconductor Corporation

1,600 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 400 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
SFAS806G Taiwan Semiconductor Corporation

SFAS806G

DIODE GEN PURP 400V 8A TO263AB

Taiwan Semiconductor Corporation

1,590 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 400 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 60pF @ 4V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
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