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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
HERAF805G Taiwan Semiconductor Corporation

HERAF805G

DIODE GEN PURP 400V 8A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 400 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V 80pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF806G Taiwan Semiconductor Corporation

HERAF806G

DIODE GEN PURP 600V 8A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 8A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 600 V 60pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF804G Taiwan Semiconductor Corporation

HERAF804G

DIODE GEN PURP 300V 8A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 300 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V 80pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF1006G Taiwan Semiconductor Corporation

HERAF1006G

DIODE GEN PURP 600V 10A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 10A 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 600 V 60pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF1005G Taiwan Semiconductor Corporation

HERAF1005G

DIODE GEN PURP 400V 10A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 400 V 10A 1.3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V 80pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF1006GH Taiwan Semiconductor Corporation

HERAF1006GH

80NS, 10A, 600V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 10A 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 600 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
HERAF805GH Taiwan Semiconductor Corporation

HERAF805GH

50NS, 8A, 400V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 400 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V 80pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
HERAF1005GH Taiwan Semiconductor Corporation

HERAF1005GH

50NS, 10A, 400V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 400 V 10A 1.3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V 80pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
HERAF808GH Taiwan Semiconductor Corporation

HERAF808GH

80NS, 8A, 1000V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 1000 V 8A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 1000 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
HERAF807GH Taiwan Semiconductor Corporation

HERAF807GH

80NS, 8A, 800V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 800 V 8A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 800 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
HERAF806GH Taiwan Semiconductor Corporation

HERAF806GH

80NS, 8A, 600V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 8A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 600 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
HERAF804GH Taiwan Semiconductor Corporation

HERAF804GH

50NS, 8A, 300V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

999 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 300 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V 80pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
SFAF808GH Taiwan Semiconductor Corporation

SFAF808GH

35NS, 8A, 600V, SUPER FAST RECOV

Taiwan Semiconductor Corporation

996 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 8A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
HERAF1004GH Taiwan Semiconductor Corporation

HERAF1004GH

50NS, 10A, 300V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

990 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 300 V 10A 1 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V 80pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
P2500B Diotec Semiconductor

P2500B

DIODE GEN PURP 100V 25A P600

Diotec Semiconductor

930 -
Datasheet - P600, Axial Cut Tape (CT) Active Standard 100 V 25A 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 100 V - - - Through Hole P-600 -50°C ~ 175°C
SFAF808G Taiwan Semiconductor Corporation

SFAF808G

DIODE GEN PURP 600V 8A ITO220AC

Taiwan Semiconductor Corporation

920 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 8A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 60pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
1N4153UR/TR Microchip Technology

1N4153UR/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

610 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - -
HERAF1007G Taiwan Semiconductor Corporation

HERAF1007G

DIODE GEN PURP 800V 10A ITO220AC

Taiwan Semiconductor Corporation

450 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 800 V 10A 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 800 V 60pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
NRTS12100PFST3G onsemi

NRTS12100PFST3G

DIODE SCHOTTKY 100V 12A TO277-3

onsemi

5,000 -
Datasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 12A 800 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) - 120 µA @ 100 V 930pF @ 1V, 1MHz - - Surface Mount TO-277-3 -55°C ~ 175°C
HERA804G Taiwan Semiconductor Corporation

HERA804G

DIODE GEN PURP 300V 8A TO220AC

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Tube Active Standard 300 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V 65pF @ 4V, 1MHz - - Through Hole TO-220AC -55°C ~ 150°C
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