Single Diodes

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
MUR820H 25NS, 8A, 200V, ULTRA FAST RECOV Taiwan Semiconductor Corporation	1,000	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	200 V	8A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	5 µA @ 200 V	-	Automotive	AEC-Q101	Through Hole	TO-220AC	-55°C ~ 175°C
SF1604G DIODE GEN PURP 200V 16A TO220AB Taiwan Semiconductor Corporation	991	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	Standard	200 V	16A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	80pF @ 4V, 1MHz	-	-	Through Hole	TO-220AB	-55°C ~ 150°C
BYW83TAP DIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division	11,750	-	RFQ	Datasheet	-	SOD-64, Axial	Cut Tape (CT)	Active	Avalanche	400 V	3A	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	7.5 µs	1 µA @ 400 V	60pF @ 4V, 1MHz	-	-	Through Hole	SOD-64	-55°C ~ 175°C
V20PL63HM3/I 20A, 60V, SMPC TRENCH SKY RECT. Vishay General Semiconductor - Diodes Division	6,290	-	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	60 V	20A	640 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	600 µA @ 60 V	3400pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-277A (SMPC)	-40°C ~ 150°C
SFS1008G DIODE GEN PURP 600V 10A TO263AB Taiwan Semiconductor Corporation	1,597	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	10A	1.7 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 600 V	50pF @ 4V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 150°C
SF808G DIODE GEN PURP 600V 8A TO220AB Taiwan Semiconductor Corporation	1,000	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	Standard	600 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	50pF @ 4V, 1MHz	-	-	Through Hole	TO-220AB	-55°C ~ 150°C
MUR840H 50NS, 8A, 400V, HIGH EFFICIENT R Taiwan Semiconductor Corporation	1,000	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	400 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 400 V	-	Automotive	AEC-Q101	Through Hole	TO-220AC	-55°C ~ 175°C
C3D02065E-TR DIODE SIC 650V 8A TO252-2 Wolfspeed, Inc.	405	-	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.8 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 650 V	120pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
TRS3E65H,S1Q G3 SIC-SBD 650V 3A TO-220-2L Toshiba Semiconductor and Storage	388	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	3A	1.35 V @ 3 A	No Recovery Time > 500mA (Io)	0 ns	45 µA @ 650 V	199pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	175°C
MBR10100F_T0_00001 10 AMPERES SCHOTTKY BARRIER RECT Panjit International Inc.	2,154	-	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Schottky	100 V	10A	800 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	-	-	-	Through Hole	ITO-220AC	-65°C ~ 175°C
VS-15ETL06HN3 DIODE GEN PURP 600V 15A TO220AC Vishay General Semiconductor - Diodes Division	1,000	-	RFQ	Datasheet	FRED Pt®	TO-220-2	Tube	Active	Standard	600 V	15A	1.05 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	220 ns	10 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-220AC	-65°C ~ 175°C
VS-8ETU04HN3 DIODE GEN PURP 400V 8A TO220AC Vishay General Semiconductor - Diodes Division	1,000	-	RFQ	Datasheet	FRED Pt®	TO-220-2	Tube	Active	Standard	400 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	43 ns	10 µA @ 400 V	-	Automotive	AEC-Q101	Through Hole	TO-220AC	-55°C ~ 175°C
MUR860H DIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation	979	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-220AC	-55°C ~ 175°C
RB075BM40SFHHTL 40V, 5A, TO-252, SUPER LOW IR SB Rohm Semiconductor	2,500	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Schottky	40 V	5A	750 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 40 V	-	Automotive	AEC-Q101	Surface Mount	TO-252	175°C
FT2000AD DIODE GEN PURP 200V 20A TO220AC Diotec Semiconductor	1,000	-	RFQ	Datasheet	-	TO-220-2	Bulk	Active	Standard	200 V	20A	960 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 200 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 150°C
RFN6RSM2STL1 200V 6A 14NS, TO-277A, ULTRA FAS Rohm Semiconductor	4,000	-	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Standard	200 V	6A	930 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 200 V	-	-	-	Surface Mount	TO-277A	175°C
YQ5RSM10SDTFTL1 TRENCH MOS STRUCTURE, 100V, 5A Rohm Semiconductor	3,990	-	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	100 V	5A	770 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	25 µA @ 100 V	-	Automotive	AEC-Q101	Surface Mount	TO-277A	175°C
MA10EA06-TE12L SCHOTTKY BARRIER DIODE, 1A, 60V, KYOCERA AVX	2,775	-	RFQ	Datasheet	-	DO-221BC, SMA Flat Leads Exposed Pad	Tape & Reel (TR)	Active	Schottky	60 V	10A	560 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	600 µA @ 60 V	-	-	-	Surface Mount	DO-221BC (MA)	-55°C ~ 150°C
MBR8170TFSTXG DIODE SCHOTTKY 170V 8A 8WDFN onsemi	4,640	-	RFQ	Datasheet	-	8-PowerWDFN	Tape & Reel (TR)	Active	Schottky	170 V	8A	890 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 170 V	237pF @ 1V, 1MHz	-	-	Surface Mount	8-WDFN (3.3x3.3)	-55°C ~ 175°C
UGF12JH DIODE GEN PURP 600V 12A ITO220AC Taiwan Semiconductor Corporation	1,000	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	12A	2 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	5 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	ITO-220AC	-55°C ~ 150°C

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