Single Diodes

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
BYV30JT-600PQ DIODE GEN PURP 600V 30A TO3P WeEn Semiconductors	3,840	-	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	Standard	600 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-3P	175°C (Max)
1N4607 DIODE GEN PURP 85V 200MA DO35 Microchip Technology	255	-	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	85 V	200mA	1.1 V @ 400 mA	Small Signal =< 200mA (Io), Any Speed	10 ns	100 µA @ 50 V	-	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 200°C
BYC30X-600P,127 DIODE GEN PURP 600V 30A TO220FP WeEn Semiconductors	9,203	-	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220FP	175°C (Max)
JAN1N4454UR-1 DIODE GEN PURP 50V 200MA DO213AA Microchip Technology	4,023	-	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Standard	50 V	200mA	1 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 50 V	-	Military	MIL-PRF-19500/144	Surface Mount	DO-213AA	-55°C ~ 175°C
IDK08G65C5XTMA1 DIODE SIL CARB 650V 8A TO263-2 Infineon Technologies	9,902	-	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	8A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	1.4 mA @ 650 V	250pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2	-55°C ~ 175°C
LFUSCD08065A DIODE SIL CARB 650V 8A TO220AC Littelfuse Inc.	500	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	230 µA @ 650 V	260pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
FMG-G2CS DIODE GEN PURP 1KV 3A TO220F-2L Sanken Electric USA Inc.	793	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	Standard	1000 V	3A	4 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	50 µA @ 1000 V	-	-	-	Through Hole	TO-220F-2L	-40°C ~ 150°C
RJU36B2WDPK-M0#T0 RECTIFIER DIODE Renesas Electronics Corporation	192,518	-	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
PSDP3060S1_T0_00001 TO-220AC, FAST Panjit International Inc.	3,791	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	30A	2.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	250 µA @ 600 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
S6D06065L 650V, 6A, DFN88, SIC SCHOTTKY DI SMC Diode Solutions	3,000	-	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
IDB06S60CATMA2 DIODE SIL CARB 600V 6A TO263-3-2 Infineon Technologies	6,183	-	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	600 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 600 V	280pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-3-2	-
IDK09G65C5XTMA1 DIODE SIL CARB 650V 9A TO263-2 Infineon Technologies	7,212	-	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	9A	1.8 V @ 9 A	No Recovery Time > 500mA (Io)	0 ns	1.6 mA @ 650 V	270pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2	-55°C ~ 175°C
PSDH30100S1_T0_00001 TO-247AD-2LD, FAST Panjit International Inc.	1,498	-	RFQ	Datasheet	-	TO-247-2	Tube	Not For New Designs	Standard	1000 V	30A	3.15 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	140 ns	250 µA @ 1000 V	-	-	-	Through Hole	TO-247AD-2	-55°C ~ 150°C
SDT05S60XK DIODE SIL CARB 600V 5A TO220-2 Infineon Technologies	700	-	RFQ	Datasheet	-	TO-220-2	Bulk	Active	SiC (Silicon Carbide) Schottky	600 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	170pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2	-55°C ~ 175°C
S6D10065E DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	2,480	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	33A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	769pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
WNSC2D03650MBJ DIODE SIL CARBIDE 650V 3A SMB WeEn Semiconductors	5,409	-	RFQ	Datasheet	-	DO-214AA, SMB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	3A	1.7 V @ 3 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	130pF @ 1V, 1MHz	-	-	Surface Mount	SMB	175°C
MURD530T4G DIODE GEN PURP 300V 5A DPAK onsemi	2,556	-	RFQ	Datasheet	SWITCHMODE™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	Standard	300 V	5A	1.05 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 300 V	-	-	-	Surface Mount	DPAK	-55°C ~ 175°C
WNSC6D01650MBJ DIODE SIL CARBIDE 650V 1A SMB WeEn Semiconductors	1,944	-	RFQ	Datasheet	-	DO-214AA, SMB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1A	1.4 V @ 1 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	130pF @ 1V, 1MHz	-	-	Surface Mount	SMB	175°C
RF1501NS3STL DIODE GEN PURP 300V 20A LPDS Rohm Semiconductor	1,023	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	300 V	20A	1.5 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 300 V	-	-	-	Surface Mount	LPDS	150°C (Max)
SD125SC150A.T1 DIODE SCHOTTKY 150V 15A DIE SMC Diode Solutions	488	-	RFQ	Datasheet	-	Die	Tray	Active	Schottky	150 V	15A	890 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 150 V	500pF @ 5V, 1MHz	-	-	Surface Mount	Die	-55°C ~ 200°C

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