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ELECTRONIC COMPONENTS

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
D4015L56TP Littelfuse Inc.

D4015L56TP

DIODE GP 400V 9.5A ITO220AB

Littelfuse Inc.

21,998 -
Datasheet Teccor® TO-220-3 Isolated Tab Tube Active Standard 400 V 9.5A 1.6 V @ 9.5 A Standard Recovery >500ns, > 200mA (Io) 4 µs 10 µA @ 400 V - - - Through Hole ITO-220AB -40°C ~ 125°C
BYC30WT-600PQ WeEn Semiconductors

BYC30WT-600PQ

DIODE GEN PURP 600V 30A TO247-3

WeEn Semiconductors

1,585 -
Datasheet - TO-247-3 Tube Active Standard 600 V 30A 2.75 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 22 ns 10 µA @ 600 V - - - Through Hole TO-247-3 175°C (Max)
PSDH3060L1_T0_00001 Panjit International Inc.

PSDH3060L1_T0_00001

TO-247AD-2LD, FAST

Panjit International Inc.

1,426 -
Datasheet - TO-247-2 Tube Active Standard 600 V 30A 1.8 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 115 ns 250 µA @ 600 V - - - Through Hole TO-247AD-2 -55°C ~ 150°C
PSDP30120L1_T0_00001 Panjit International Inc.

PSDP30120L1_T0_00001

TO-220AC, FAST

Panjit International Inc.

1,960 -
Datasheet - TO-220-2 Tube Active Standard 1200 V 30A 2.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 240 ns 250 µA @ 1200 V - - - Through Hole TO-220AC -55°C ~ 150°C
RURD3070 Harris Corporation

RURD3070

RECTIFIER DIODE, 30A, 700V

Harris Corporation

225 -
Datasheet * - Bulk Active - - - - - - - - - - - - -
PCFF60UP60F onsemi

PCFF60UP60F

DIODE ULTRAFAST

onsemi

5,918 -
Datasheet * - Bulk Obsolete - - - - - - - - - - - - -
ISL9R3060P2 onsemi

ISL9R3060P2

DIODE GEN PURP 600V 30A TO220-2

onsemi

5,056 -
Datasheet Stealth™ TO-220-2 Bulk Obsolete Avalanche 600 V 30A 2.4 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 100 µA @ 600 V - - - Through Hole TO-220-2 -55°C ~ 175°C
RJU6054SDPK-M0#T0 Renesas Electronics Corporation

RJU6054SDPK-M0#T0

RECTIFIER DIODE, 30A, 600V

Renesas Electronics Corporation

3,330 -
Datasheet * - Bulk Active - - - - - - - - - - - - -
RJU6054WDPK-M0#T0 Renesas Electronics Corporation

RJU6054WDPK-M0#T0

RECTIFIER DIODE

Renesas Electronics Corporation

1,208 -
Datasheet * - Bulk Active - - - - - - - - - - - - -
BYC30-600P,127 WeEn Semiconductors

BYC30-600P,127

DIODE GEN PURP 600V 30A TO220AC

WeEn Semiconductors

7,896 -
Datasheet - TO-220-2 Tube Active Standard 600 V 30A 1.8 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V - - - Through Hole TO-220AC 175°C (Max)
RURD3080 Harris Corporation

RURD3080

RECTIFIER DIODE, 30A, 800V

Harris Corporation

250 -
Datasheet * - Bulk Active - - - - - - - - - - - - -
NXPSC046506Q WeEn Semiconductors

NXPSC046506Q

DIODE SIL CARB 650V 4A TO220AC

WeEn Semiconductors

20,200 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 170 µA @ 650 V 130pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
NXPSC04650X6Q WeEn Semiconductors

NXPSC04650X6Q

DIODE SIL CARBIDE 650V 4A TO220F

WeEn Semiconductors

2,826 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 170 µA @ 650 V 130pF @ 1V, 1MHz - - Through Hole TO-220F 175°C (Max)
RURD3090 Harris Corporation

RURD3090

RECTIFIER DIODE, 30A, 900V

Harris Corporation

119 -
Datasheet * - Bulk Active - - - - - - - - - - - - -
MBR1660 onsemi

MBR1660

DIODE SCHOTTKY 60V 16A TO220-2

onsemi

533 -
Datasheet - TO-220-2 Tube Obsolete Schottky 60 V 16A 750 mV @ 16 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 60 V - - - Through Hole TO-220-2 -65°C ~ 150°C
G3S06503A Global Power Technology-GPT

G3S06503A

DIODE SIC 650V 11.5A TO220AC

Global Power Technology-GPT

390 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 11.5A 1.7 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 181pF @ 0V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
RURD30100 Harris Corporation

RURD30100

RECTIFIER DIODE, 30A, 1000V

Harris Corporation

365 -
Datasheet * - Bulk Active - - - - - - - - - - - - -
NXPSC04650B6J WeEn Semiconductors

NXPSC04650B6J

DIODE SIL CARBIDE 650V 4A D2PAK

WeEn Semiconductors

3,090 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 170 µA @ 650 V 130pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C (Max)
BYV60W-600PQ WeEn Semiconductors

BYV60W-600PQ

DIODE GEN PURP 600V 60A TO247-2

WeEn Semiconductors

4,084 -
Datasheet - TO-247-2 Tube Active Standard 600 V 60A 2 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 10 µA @ 600 V - - - Through Hole TO-247-2 175°C (Max)
RURG3020 Harris Corporation

RURG3020

DIODE AVALANCHE 200V 30A TO247

Harris Corporation

575 -
Datasheet - TO-247-3 Bulk Active Avalanche 200 V 30A 1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 250 µA @ 200 V - - - Through Hole TO-247 -65°C ~ 175°C
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