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ELECTRONIC COMPONENTS
Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PSDB3060L1_T0_00001TO-263, FRED |
1,658 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Standard | 600 V | 30A | 1.8 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 115 ns | 250 µA @ 600 V | - | - | - | Surface Mount | TO-263 | -55°C ~ 150°C |
|
|
WNSC2D10650BJDIODE SIL CARBIDE 650V 10A D2PAK |
8,768 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 310pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C |
|
PSDH30120L1_T0_00001TO-247AD-2LD, FAST |
1,460 | - |
|
Datasheet | - | TO-247-2 | Tube | Not For New Designs | Standard | 1200 V | 30A | 2.6 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 240 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247AD-2 | -55°C ~ 150°C |
|
|
PSDH30120S1_T0_00001TO-247AD-2LD, FAST |
1,388 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1200 V | 30A | 3.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247AD-2 | -55°C ~ 150°C |
|
|
S4D10120G0DIODE SCHOTTKY SILICON CARBIDE S |
800 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 772pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
|
S4D10120G1200V, 10A, D2PAK, SIC SCHOTTKY |
133 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263-2 | - |
|
|
WNSC2D12650TJDIODE SIL CARBIDE 650V 12A 5DFN |
2,985 | - |
|
Datasheet | - | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 380pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C |
|
SCS310AHGC9DIODE SIL CARB 650V 10A TO220ACP |
361 | - |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACP | 175°C (Max) |
|
RURU5060DIODE AVALANCHE 600V 50A TO218 |
3,504 | - |
|
Datasheet | - | TO-218-1 | Bulk | Active | Avalanche | 600 V | 50A | 1.6 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 500 µA @ 600 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
|
|
RURG8050DIODE AVALANCHE 500V 80A TO247-2 |
481 | - |
|
Datasheet | - | TO-247-2 | Bulk | Active | Avalanche | 500 V | 80A | 1.6 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | 85 ns | 500 µA @ 500 V | - | - | - | Through Hole | TO-247-2 | -65°C ~ 175°C |
|
|
RURU8040DIODE AVALANCHE 400V 80A TO218 |
3,000 | - |
|
Datasheet | - | TO-218-1 | Bulk | Active | Avalanche | 400 V | 80A | 1.6 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | 85 ns | 500 µA @ 400 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
|
|
WNSC12650T6JDIODE SIL CARBIDE 650V 12A 5DFN |
2,998 | - |
|
Datasheet | - | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.8 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 328pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C |
|
IDT10S60CDIODE SIL CARB 600V 10A TO220-2 |
1,479 | - |
|
Datasheet | thinQ!™ | TO-220-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 600 V | 10A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 600 V | 480pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
SICU0460B-TPDIODE SIL CARBIDE 650V 4A DPAK |
2,413 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.8 V @ 4 A | No Recovery Time > 500mA (Io) | - | 15 µA @ 650 V | 200pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
FFSH1665ADIODE SIL CARB 650V 23A TO247-2 |
8,896 | - |
|
Datasheet | - | TO-247-2 | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 23A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 887pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 150°C |
|
FFSP0465ADIODE SIL CARB 650V 8.6A TO220-2 |
792 | - |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8.6A | 1.75 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 258pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
NXPSC066506QDIODE SIL CARB 650V 6A TO220AC |
3,000 | - |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
|
PCDD0665G1_L2_00001650V SIC SCHOTTKY BARRIER DIODE |
2,976 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 228pF @ 1V, 1MHz | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
|
NXPSC06650B6JDIODE SIL CARBIDE 650V 6A D2PAK |
3,188 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
|
PCDB0665G1_R2_00001650V SIC SCHOTTKY BARRIER DIODE |
800 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 228pF @ 1V, 1MHz | - | - | Surface Mount | TO-263 | -55°C ~ 175°C |
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