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VNS3NV04DPTR-E

IC PWR DRIVER N-CHANNEL 1:1 8SO

Part Number: VNS3NV04DPTR-E

Manufacturer: STMicroelectronics

Category: Power Distribution Switches, Load Drivers

Package: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: VNS3NV04DPTR-E.pdf

Description: IC PWR DRIVER N-CHANNEL 1:1 8SO

Select Quantity Stock: 25,163

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PRODUCT INFORMATION

Product Details

PRODUCT TECHNICAL REFERENCE

VNS3NV04DPTR-E Automotive OMNIFET II Fully Autoprotected Power MOSFET

A comprehensive technical overview of the VNS3NV04DPTR-E, an automotive OMNIFET II fully autoprotected power MOSFET from STMicroelectronics featuring 3.5A continuous output current, 40V drain-source clamp voltage, 120mΩ max on-state resistance, dual low-side channels, AEC-Q100 qualification, and extended temperature range of –40°C to 150°C. Covers device function, core features, electrical specifications, 8-lead SOIC package, pin configuration, typical applications, and replacement selection guidance.

STMicroelectronics 8-SOIC 36V (Max Load)

Device Classification OMNIFET II Autoprotected Power MOSFET

Part Number: VNS3NV04DPTR-E

Mounting Type: Surface Mount

Operating Temperature Range: -40°C to +150°C

PRODUCT OVERVIEW

What Is the VNS3NV04DPTR-E?

VNS3NV04DPTR-E is an automotive OMNIFET II fully autoprotected power MOSFET from STMicroelectronics, part of the VIPower M0-3 technology family. The device is made up of two monolithic chips (OMNIFET II) housed in a standard SO-8 package.

The VNS3NV04DPTR-E is intended for replacement of standard Power MOSFETs in up to 50 kHz DC applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring voltage at the input pin.

The device features a maximum on-state resistance of 120 mΩ per channel, a typical current limitation of 3.5 A, and a drain-source clamp voltage of 40 V. The VNS3NV04DPTR-E is AEC-Q100 qualified, ECOPACK lead-free and RoHS compliant, and is rated for operation from –40°C to +150°C junction temperature. The device is offered in an 8-lead SOIC package and is in active production.

OMNIFET II Autoprotected MOSFET Dual low-side power MOSFET with integrated thermal shutdown, linear current limitation, and overvoltage clamp.

Automotive Grade AEC-Q100 qualified for automotive applications with –40°C to 150°C operating temperature range.

Diagnostic Feedback Fault feedback through input pin; direct access to the gate of the Power MOSFET for analog driving.

DEVICE HIGHLIGHTS

Key Features and Benefits of VNS3NV04DPTR-E

AEC-Q100 Qualified

AEC-Q100 qualified for automotive applications with –40°C to 150°C junction temperature range.

Dual Low-Side Channels

Two independent low-side power MOSFET channels in a single SO-8 package, each capable of 3.5A continuous output current.

Fully Autoprotected

Integrated thermal shutdown, linear current limitation, short-circuit protection, and overvoltage clamp protect the device in harsh environments.

Diagnostic Feedback

Fault feedback can be detected by monitoring voltage at the input pin, enabling system-level diagnostics.

Direct Gate Access

Direct access to the gate of the Power MOSFET allows analog driving and compatibility with standard Power MOSFETs.

Standard SO-8 Package

Available in a standard 8-lead SOIC package with tape-and-reel packaging (2,500 units per reel), ideal for automated assembly.

REFERENCE DATA

Technical Specifications for VNS3NV04DPTR-E

Part Number	VNS3NV04DPTR-E	Manufacturer	STMicroelectronics
Device Type	OMNIFET II Autoprotected Power MOSFET	Technology	VIPower M0-3
Number of Channels	2	Output Configuration	Low-Side
Continuous Output Current (Max)	3.5A	Current Limitation (Typical)	5A
On-State Resistance (Max)	120 mΩ	Drain-Source Clamp Voltage	40 V (Typical)
Maximum Load Voltage	36V	Supply Voltage (Vcc/Vdd)	Not Required
Input Type	Non-Inverting	Switch Type	General Purpose
Ratio - Input:Output	1:1	Output Type	N-Channel
Interface	On/Off	Fault Protection	Current Limiting (Fixed), Over Temperature, Over Voltage
Operating Temperature (Junction)	-40°C to +150°C	Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC	Package Body Size	5.00mm × 4.00mm
Package Height	1.5mm (Max)	Mounting Type	Surface Mount
Qualification	AEC-Q100	Moisture Sensitivity Level	MSL 3 (168 Hours)
RoHS	ROHS3 Compliant (Ecopack2)	REACH Status	REACH Unaffected
SVHC	No SVHC (21-Jan-2025)	ECCN	EAR99
Packaging	Tape & Reel (2,500 per Reel)	Product Status	Active
Longevity Commitment	10 Years	Series	OMNIFET II™, VIPower™

Electrical values shown above are reference values. Test conditions, limits, and guaranteed performance should always be confirmed from the current official manufacturer datasheet before design or production use.

DESIGN REFERENCE

Circuit Considerations for VNS3NV04DPTR-E

Power Supply & Key Features

The VNS3NV04DPTR-E offers flexible configuration and robust protection:

Load Voltage: Maximum load voltage of 36V; drain-source clamp voltage of 40V (typical) protects against inductive load transients
Current Limitation: Linear current limitation with typical limit of 5A protects the device during overload conditions
Thermal Protection: Built-in thermal shutdown protects the chip in harsh environments
Diagnostic Feedback: Fault feedback can be detected by monitoring voltage at the input pin
Direct Gate Access: Direct access to the gate of the Power MOSFET allows analog driving and compatibility with standard Power MOSFETs

PCB and Signal Integrity Guidance

Power MOSFET performance depends on layout and thermal management:

Input Pin: Low current drawn from input pin; diagnostic feedback available through input pin
ESD Protection: Integrated ESD protection for robust operation
Thermal Management: The device is rated for –40°C to 150°C junction temperature; ensure adequate PCB copper area for heat dissipation
SO-8 Layout: Follow the recommended PCB footprint from the official datasheet prior to production
Switching Frequency: Intended for replacement of standard Power MOSFETs in up to 50 kHz DC applications
Verify the recommended PCB footprint from the official datasheet prior to production

8-LEAD SOIC (5.00mm × 4.00mm)

Pin Configuration Reference for VNS3NV04DPTR-E

VNS3NV04

SOIC TOP VIEW

Confirm package orientation and pin numbering against the official package drawing before PCB layout. The SOIC package has 8 pins with a 5.00mm × 4.00mm body size and 1.5mm maximum height.

1 IN1 Input Channel 1 - Gate drive input; diagnostic feedback output

2 OUT1 Output Channel 1 - Source of Power MOSFET; connect to load

3 GND1 Ground Channel 1 - Power ground for channel 1

4 GND2 Ground Channel 2 - Power ground for channel 2

5 OUT2 Output Channel 2 - Source of Power MOSFET; connect to load

6 IN2 Input Channel 2 - Gate drive input; diagnostic feedback output

7 DRAIN2 Drain Channel 2 - Common drain connection; connect to power supply

8 DRAIN1 Drain Channel 1 - Common drain connection; connect to power supply

APPLICATION AREAS

Typical Applications for VNS3NV04DPTR-E

Automotive DC Load Driving

Designed to drive DC loads according to EN 60947-5-1, suitable for automotive body electronics and lighting.

Automotive Lighting

Low-side switching for automotive lamps, LEDs, and other lighting applications requiring robust protection.

Standard Power MOSFET Replacement

Intended for replacement of standard Power MOSFETs in up to 50 kHz DC applications with integrated protection features.

Industrial DC Loads

Designed to drive resistive, capacitive, and inductive loads in industrial automation and control systems.

Diagnostic-Enabled Switching

Fault feedback through input pin enables system-level diagnostics for smart power distribution.

High-Current Low-Side Switching

3.5A continuous output current per channel with 5A typical current limitation for robust low-side switching applications.

REPLACEMENT GUIDANCE

Selecting an Alternative for VNS3NV04DPTR-E

A replacement for the VNS3NV04DPTR-E should not be selected solely by product category. The electrical characteristics, package, and pin configuration must be evaluated against the specific circuit requirements. The following alternatives are documented in the official STMicroelectronics datasheet and product pages.

OMNIFET II autoprotected power MOSFET with 2 channels

Continuous output current: 3.5A per channel

On-state resistance: 120 mΩ max

Clamp voltage: 40V typical

Package: 8-SOIC

Temperature range: –40°C to 150°C

AEC-Q100 qualification

Fault protection: Thermal shutdown, current limit, overvoltage clamp

Packaging alternatives:

Part Number	Package	Carrier	SPQ	Temperature Range
VNS3NV04DPTR-E	8-SOIC	Tape & Reel	2,500	-40°C to 150°C
VNS3NV04DP-E	8-SOIC	Tube	-	-40°C to 150°C
VNS1NV04DPTR-E	8-SOIC	Tape & Reel	2,500	-40°C to 150°C

The VNS3NV04DPTR-E is the tape-and-reel packaged variant (2,500 units per reel) in 8-SOIC package. For tube packaging, consider VNS3NV04DP-E. The VNS3NV04DPTR-E can directly replace the obsolete VNS3NV04D-E with identical parameters. For lower current applications, consider the VNS1NV04DPTR-E (1A version). Select based on packaging, current rating, and availability.

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MANUFACTURER INFORMATION

STMicroelectronics

The VNS3NV04DP-E (VNS3NV04DPTR-E) belongs to the OMNIFET II family of fully autoprotected Power MOSFETs from STMicroelectronics. The device is designed using STMicroelectronics VIPower M0-3 technology and is intended for replacement of standard Power MOSFETs in up to 50 kHz DC applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring voltage at the input pin. The device is AEC-Q100 qualified, ECOPACK lead-free and RoHS compliant, and is available in 8-SOIC package. The VNS3NV04DPTR-E is widely used in automotive DC load driving, automotive lighting, industrial automation, and power MOSFET replacement applications.

SUPPLIED BY

Haishengye Electronics

Haishengye Electronics provides electronic component stock supply, BOM sourcing, quotation support, and quality inspection services for VNS3NV04DPTR-E and related devices.

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Technical Information Disclaimer

This technical guide is provided for product identification and preliminary reference only. Electrical limits, package dimensions, pin configuration, product status, and application suitability must be verified using current official manufacturer documentation before design, procurement, or production.

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Specifications

Product Attribute: Attribute Value

Part Number: VNS3NV04DPTR-E

Manufacturer: STMicroelectronics

Package: 8-SOIC (0.154", 3.90mm Width)

Package/Case: 8-SOIC (0.154", 3.90mm Width)

Series: OMNIFET II™, VIPower™

Packaging: Tape & Reel (TR)

Product Status: Active

Switch Type: General Purpose

Number of Outputs: 2

Ratio - Input:Output: 1:1

Output Configuration: Low Side

Output Type: N-Channel

Interface: On/Off

Voltage - Load: 36V (Max)

Voltage - Supply (Vcc/Vdd): Not Required

Current - Output (Max): 3.5A

Rds On (Typ): 120mOhm (Max)

Input Type: Non-Inverting

Features: -

Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage

Operating Temperature: -40°C ~ 150°C (TJ)

Grade: -

Qualification: -

Mounting Type: Surface Mount

Supplier Device Package: 8-SOIC

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Contact our sales team within the agreed period if there are quantity differences, incorrect items or clear external defects. Products should remain unused and in their original packaging.

7. Can I request technical support for VNS3NV04DPTR-E?

Yes. Contact our team for datasheets, package details, product specifications, alternative parts and sourcing assistance.

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VNS3NV04DPTR-E Procurement and Technical Support

VNS3NV04DPTR-E is manufactured by STMicroelectronics. This page provides purchasing information including manufacturer, category, package, datasheet, stock reference, price reference and product specifications.

Haishengye Electronics supports customers sourcing VNS3NV04DPTR-E and related electronic components for prototype development, maintenance, NPI, production preparation and one-stop BOM procurement.

Submit an RFQ to request the latest stock, price, lead time, batch information, alternative parts, package confirmation or technical documents for VNS3NV04DPTR-E.

Part Number: VNS3NV04DPTR-E

Manufacturer: STMicroelectronics

Package: 8-SOIC (0.154", 3.90mm Width)

Category: Power Distribution Switches, Load Drivers

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