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GC11N65M

Q: How can I order GC11N65M from Haishengye Electronics?

Submit an RFQ directly on this page with your required quantity, target price and delivery requirements. Our sales team will review the request and provide a quotation.

Q: How does Haishengye Electronics verify the quality of GC11N65M?

We work with qualified suppliers and review sourcing channels, traceability, packaging and product condition before shipment.

Q: Are the stock and price of GC11N65M updated in real time?

Electronic component inventory and prices may change frequently. Displayed values are references, and the final stock and price will be confirmed in the quotation.

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Part Number: GC11N65M

Manufacturer: Goford Semiconductor

Category: FETs, MOSFETs

Package: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: GC11N65M.pdf

Description: N650V,RD(MAX)<360M@10V,VTH2.5V~4

Select Quantity Stock: 775

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GC11N65M Technical Information

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Specifications

Product Attribute: Attribute Value

Part Number: GC11N65M

Manufacturer: Goford Semiconductor

Package: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Series: SuperJunction

Package/Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging: Cut Tape (CT)

Product Status: Active

FET Type: N-Channel

Technology: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss): 650 V

Current - Continuous Drain (Id) @ 25°C: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On): 10V

Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V

Vgs (Max): ±30V

Input Capacitance (Ciss) (Max) @ Vds: 768 pF @ 50 V

FET Feature: -

Power Dissipation (Max): 78W (Tc)

Operating Temperature: -55°C ~ 150°C (TJ)

Grade: -

Qualification: -

Mounting Type: Surface Mount

Supplier Device Package: TO-263

Frequently Asked Questions

1. How can I order GC11N65M from Haishengye Electronics?

Submit an RFQ directly on this page with your required quantity, target price and delivery requirements. Our sales team will review the request and provide a quotation.

2. How does Haishengye Electronics verify the quality of GC11N65M?

We work with qualified suppliers and review sourcing channels, traceability, packaging and product condition before shipment.

3. Are the stock and price of GC11N65M updated in real time?

Electronic component inventory and prices may change frequently. Displayed values are references, and final stock and pricing will be confirmed in the quotation.

4. Which payment methods are supported?

Wire Transfer, PayPal, Alipay, WeChat, Credit Card, Western Union, MoneyGram and Escrow may be supported depending on the order and destination.

5. How is international shipping arranged?

International shipping may be arranged through DHL, UPS, FedEx, TNT and other logistics channels. Tracking information will be provided after shipment.

6. What is the return or replacement process for GC11N65M?

Contact our sales team within the agreed period if there are quantity differences, incorrect items or clear external defects. Products should remain unused and in their original packaging.

7. Can I request technical support for GC11N65M?

Yes. Contact our team for datasheets, package details, product specifications, alternative parts and sourcing assistance.

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GC11N65M Procurement and Technical Support

GC11N65M is manufactured by Goford Semiconductor. This page provides purchasing information including manufacturer, category, package, datasheet, stock reference, price reference and product specifications.

Haishengye Electronics supports customers sourcing GC11N65M and related electronic components for prototype development, maintenance, NPI, production preparation and one-stop BOM procurement.

Submit an RFQ to request the latest stock, price, lead time, batch information, alternative parts, package confirmation or technical documents for GC11N65M.

Part Number: GC11N65M

Manufacturer: Goford Semiconductor

Package: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Category: FETs, MOSFETs

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